US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Device having different first metallization layer and first buried metallization layer architectures and method of manufacturing same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,481, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Device having different first metallization layer and first buried metallization layer architectures and method of manufacturing same" was invented by Chun-Yen Lin (Hsinchu, Taiwan), Ching-Yu Huang (Hsinchu, Taiwan), Wei-Cheng Lin (Hsinchu, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes: a first cell region stacked on a second cell region; each including a first active region over a second active region; in a first layer of metallization (M_first layer) over the first active regio...