US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Cap for gate stack of multigate device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,232, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Cap for gate stack of multigate device" was invented by Chih-Wei Lee (New Taipei City, Taiwan) and Hsin-Han Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary method for forming a gate stack of a multigate device includes forming a gate dielectric layer, forming a work function layer over the gate dielectric layer, forming a cap over the work function layer, and forming a gate electrode layer over the cap. Forming the cap includes forming a first portion of a first capping layer over the work function layer, perf...