US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 29 for "Lateral bipolar junction transistor device and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,747,993, issued on Sept. 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hisinchu, Taiwan).

"Lateral bipolar junction transistor device and method of forming same" was invented by Wei-Jen Chang (Miaoli, Taiwan), Bor-Jou Lin (Hsinchu, Taiwan), Hung-Han Lin (Hsinchu, Taiwan) and Chung-Shih Chiang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lateral-bipolar junction transistor (BJT) including a semiconductor substrate, an insulator region disposed on the semiconductor substrate, and a well region comprising a well semiconductor of a first conductivity type disposed over the insulator region. An emitter region of a ...