US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 22 for "Single metal gate with dual effective work function gate metal scheme" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,454, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Single metal gate with dual effective work function gate metal scheme" was invented by Chung-Wei Hsu (Hsinchu, Taiwan), Lung-Kun Chu (Hsinchu, Taiwan), Jia-Ni Yu (Hsinchu, Taiwan), Chun-Fu Lu (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes an NMOS gate all around (GAA) transistor and a PMOS GAA transistor. A single gate metal is utilized for both transistors. An effective work function is imparted to the NMOS transistor by inclu...