ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,424, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and method for manufacturing the same" was invented by Huang-Chao Chang (Hsinchu, Taiwan), Ta-Chun Lin (Hsinchu, Taiwan), Chun-Sheng Liang (Hsinchu, Taiwan) and Jhon-Jhy Liaw (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a dielectric wall, and two device units. The dielectric wall has two side surfaces opposite to each other. The two device units are respectively formed at the two side surfaces of the dielectric wall. Each of the device units includes c...