US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 22 for "Semiconductor devices with dummy fill structures between a through silicon via and an active device and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,641, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices with dummy fill structures between a through silicon via and an active device and methods of forming the same" was invented by Mao-Nan Wang (Kaohsiung, Taiwan), Chih Hsin Yang (Zhubei, Taiwan), Liang-Wei Wang (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices having dummy regions with dummy fill structures that vary in lateral dimensions and methods for forming the semiconductor devices are provided herein. The semiconductor devices may include a thr...