US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 22 for "Semiconductor device having multiple electrostatic discharge (ESD) paths" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,465, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device having multiple electrostatic discharge (ESD) paths" was invented by Po-Lin Peng (Taoyuan City, Taiwan), Li-Wei Chu (Hsinchu City, Taiwan), Ming-Fu Tsai (Hsinchu City, Taiwan), Jam-Wem Lee (Hsinchu City, Taiwan) and Yu-Ti Su (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the f...