ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,097, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacturing the same" was invented by Meng-Sheng Chang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes peripheral transistors formed along a first surface of a substate; memory cells formed in one or more of first metallization layers disposed over the first surface, each of the memory cells being operatively coupled to a subset of the peripheral transistors and including a programming transistor and at least a first reading transistor; and second metallization la...