US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 22 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,422, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Chia-Ling Chung (Hsinchu, Taiwan), Chun-Chih Cheng (Changhua, Taiwan), Ying-Liang Chuang (Hsinchu, Taiwan), Ming-Hsi Yeh (Hsinchu, Taiwan) and Kuo-Bin Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a substrate having a metal gate, gate spacers on sides of the metal gate, an etch stop layer (ESL), and interlayer dielectric (ILD) material over a ...