US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 22 for "Semiconductor device, memory cell and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,574, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device, memory cell and method of forming the same" was invented by Tung-Ying Lee (Hsinchu City, Taiwan), Bo-Jiun Lin (Hsinchu County, Taiwan), Shao-Ming Yu (Hsinchu County, Taiwan) and Yu-Chao Lin (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The s...