US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 22 for "Magnetic tunnel junction stack and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,569, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetic tunnel junction stack and method for manufacturing the same" was invented by Nuo Xu (Hsinchu, Taiwan), Po-Sheng Lu (Hsinchu, Taiwan), Zhi-Ren Xiao (Hsinchu, Taiwan) and Zhiqiang Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic tunnel junction (MTJ) stack includes a reference layer, a tunnel barrier layer, a free layer, and a superparamagnetic layer. The reference layer has a fixed magnetization direction. The tunnel barrier layer is disposed on the reference layer, and includes an insulating material. Th...