US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 22 for "Embedding a metal-insulator-metal capacitor in a passivation layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,628, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Embedding a metal-insulator-metal capacitor in a passivation layer" was invented by Ying-Ju Wu (Hsinchu, Taiwan), Tzu-Ting Liu (Taoyuan City, Taiwan), Hsiang-Ku Shen (Hsinchu City, Taiwan), Chen-Chiu Huang (Taichung City, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A passivation layer is formed over an interconnect structure. An opening is etched at least partially through the passivation layer. A first conductive layer is deposited over the passivation layer. The first conductive layer partially...