US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 22 for "Deep trench isolation structure for high resolution CIS pixel" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,476, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Deep trench isolation structure for high resolution CIS pixel" was invented by Chih Cheng Shih (Kaohsiung City, Taiwan), Tsun-Kai Tsao (Tainan City, Taiwan), Jiech-Fun Lu (Madou Township, Taiwan), Hung-Wen Hsu (Tainan City, Taiwan), Bing Cheng You (Taichung City, Taiwan) and Wen-Chang Kuo (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process...