US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Vertical gate-all-around (GAA) memory cell and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,141, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical gate-all-around (GAA) memory cell and method for forming the same" was invented by Shih-Yu Liao (Hsinchu City, Taiwan) and Chung-Liang Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed to a vertical gate-all-around (GAA) memory cell. A middle conductor overlies a lower conductor and decreases in width towards the lower conductor to culminate in a point spaced from the lower conductor. An insulator structure is between the lower conductor and the middle ...