US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Transistor protection layers and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,216, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor protection layers and methods of forming the same" was invented by Yu-Ting Chen (Hsinchu, Taiwan), Tai-Jung Kuo (Hsinchu, Taiwan), Mu-Chieh Chang (Zhubei City, Taiwan), Zhen-Cheng Wu (Hsinchu, Taiwan), Sung-En Lin (Xionglin Township, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments include protection layers for a transistor and methods of forming the same. In an embodiment, a method includes: exposing a semiconductor nanostructure, a dummy nanostructure, and an isolation regio...