ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,200, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Transistor, semiconductor device, and semiconductor structure" was invented by Chao-Ching Cheng (Hsinchu City, Taiwan), Jui-Chien Huang (Hsinchu City, Taiwan), Yi-Tse Hung (Hsinchu, Taiwan), Shih Hao Wang (Taipei City, Taiwan), Han Wang (Hsinchu, Taiwan) and Szuya Liao (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a gate structure, a channel layer underlying the gate structure and comprising a two-dimensional (2D) material, source/drain contacts laterally spaced apart from the gate structure and disposed lat...