US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Stacked multi-gate device with diffusion stopping layer and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,241, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Stacked multi-gate device with diffusion stopping layer and manufacturing method thereof" was invented by Chien-Yu Lin (Yilan County, Taiwan), Tien-Shun Chang (New Taipei City, Taiwan), Yi-Syuan Siao (Changhua City, Taiwan), Su-Hao Liu (Chiayi County, Taiwan) and Chi On Chui (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin structure including a first channel layer, a sacrificial layer, and a second channel layer over a substrate; forming a dummy gate structure across the fin structure; recess...