US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Stacked complementary FinFET process and device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,240, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stacked complementary FinFET process and device" was invented by Ting-Yun Wu (Taipei, Taiwan), Jui-Chien Huang (Hsinchu, Taiwan) and Szuya Liao (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming complementary FinFET (CFET) in a stacked configuration includes forming a recess in a stacked fin, growing a first epitaxial structure in the recess, etching the first epitaxial structure to remove a portion of the first epitaxial structure, forming a first isolation structure over the first epitaxial structure, and forming...