US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Semiconductor device with schottky barrier interface and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,236, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with schottky barrier interface and manufacturing method thereof" was invented by Yu-Ying Lai (Changhua County, Taiwan), Po-Chih Su (New Taipei City, Taiwan) and Ruey-Hsin Liu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device, including a substrate, a first dopant region in the substrate, wherein the first dopant is doped with a first conductivity type dopant, a first drift region at a top surface of the substrate, a first drain region adjacent to th...