ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,225, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Po-Kang Ho (Taoyuan, Taiwan), Kuo-Ju Chen (Taichung, Taiwan), Wei-Ting Chang (Hsinchu, Taiwan), Wei-Fu Wang (Hsinchu, Taiwan), Li-Ting Wang (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan), Yi-Chao Wang (Hsinchu, Taiwan) and Tsai-Yu Huang (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin protruding from a semiconductor substrate; forming a dummy gate stack over the fin, wherein forming the dummy gate stack includes depos...