US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Replacement gate process for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,410, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Replacement gate process for semiconductor devices" was invented by Yu-Jen Shen (Hsin-Chu, Taiwan), Ying-Ho Chen (Taipei, Taiwan) and Yung-Cheng Lu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and gate stacks over the substrate, wherein each of the gate stacks includes an electrode layer, a first hard mask (HM) layer over the electrode layer, and a second HM layer over the first HM layer. The method furt...