US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Read-only memory device and method" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,158, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Read-only memory device and method" was invented by Ku-Feng Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A read-only memory (ROM) device includes a complementary field effect transistor (CFET) device which has a first semiconductor device of a first type, and a second semiconductor device of a second type different from the first type. The second semiconductor device is over or under the first semiconductor device. A first word line is electrically coupled to a gate of the first semiconductor device. A second word line i...