US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Method of forming a nano-FET semiconductor device having a spacer with a reducer seam" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,227, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming a nano-FET semiconductor device having a spacer with a reducer seam" was invented by Li-Chi Yu (Jhubei, Taiwan), Cheng-I Chu (Hsinchu, Taiwan), Chen-Fong Tsai (Hsinchu, Taiwan), Yi-Rui Chen (Hsinchu, Taiwan), Sen-Hong Syue (Zhubei, Taiwan), Wen-Kai Lin (Yilan, Taiwan), Yoh-Rong Liu (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process...