ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,226, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor structure" was invented by Shih-Cheng Chen (New Taipei City, Taiwan), Zhi-Chang Lin (Zhubei City, Taiwan), Jung-Hung Chang (Changhua County, Taiwan), Chien-Ning Yao (Hsinchu, Taiwan), Tsung-Han Chuang (Tainan City, Taiwan) and Kuo-Cheng Chiang (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming a spacer layer along a first fin structure and a second fin structure, etching a first portion of the spacer layer a...