US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Method for forming a SRAM memory cell structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,142, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming a SRAM memory cell structure" was invented by Hidehiro Fujiwara (Hsinchu, Taiwan), Yi-Hsin Nien (Hsinchu, Taiwan) and Hung-Jen Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes memory cells. A first memory cell of the memory cells includes a first write port laid out in a first doping region and a first read port laid out in a second doping region. The first read port is separated from the first write port by a second write port of a second memory cell of the memory cells."

The patent wa...