US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Fin isolation regions with improved depth distribution and methods forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,234, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin isolation regions with improved depth distribution and methods forming the same" was invented by Tzu-Ging Lin (Kaohsiung City, Taiwan), Yi-Chun Chen (Hsinchu, Taiwan) and Jih-Jse Lin (Sijhih City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate stack on a semiconductor region, wherein the semiconductor region is over a bulk semiconductor substrate. The gate stack is etched to form a first trench, wherein a plurality of protruding semiconductor fins are revealed to the first trench. The plurality of protru...