US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Controlled doping in a gate dielectric layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,186, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Controlled doping in a gate dielectric layer" was invented by Shahaji B. More (Hsinchu City, Taiwan) and Chandrashekhar Prakash Savant (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes method to form a semiconductor device having a gate dielectric layer with controlled doping. The method includes forming a gate dielectric layer on a fin structure, forming a diffusion barrier layer on the gate dielectric layer, and forming a dopant source layer on the diffusion barrier layer. The gate dielectric l...