US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Complementary FET (CFET) devices and methods" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,233, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Complementary FET (CFET) devices and methods" was invented by Jui-Chien Huang (Hsinchu, Taiwan), Szuya Liao (Hsinchu, Taiwan), Cheng-Yin Wang (Hsinchu, Taiwan) and Shih Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first transistor of a first semiconductor device. The first semiconductor device includes a first channel region and a gate electrode on the first channel region. A second semiconductor device is bonded to the first semiconductor device by a bonding layer disposed between the first ...