ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,746, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Wire bonding using in-situ plasma treatment and apparatus for effecting the same" was invented by Hui-Min Huang (Taoyuan City, Taiwan), Chang-Jung Hsueh (Taipei, Taiwan), Chih-Yuan Chiu (Zhudong Township, Taiwan), Jen-Hao Liu (Zhunan Township, Taiwan), Ming-Da Cheng (Taoyuan, Taiwan) and Amram Eitan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bonded assembly may be formed by: providing a substrate and a semiconductor chip in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; disposing the semicond...