US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 6 for "Semiconductor memory devices with dielectric fin structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,790, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor memory devices with dielectric fin structures" was invented by Meng-Sheng Chang (Chubei City, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Yih Wang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system includes a memory array comprising a plurality of memory cells. Each of the memory cells includes a first programming transistor, a second programming transistor, a first reading transistor coupled to the first programming transistor in series, and a second reading transistor coupled to the second ...