US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 6 for "Memory device" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,773, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device" was invented by Shigeki Shimomura (Cupertino, Calif.) and Jonathan Tsung-Yung Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes a bit cell having a first invertor connected between a first node and a second node and a second invertor connected between the first node and the second node. The first invertor and the second invertor are cross coupled at a first data node and a second data node. The memory device further includes a pull down circuit connected to th...