US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 6 for "Area selective deposition for zero via enclosure and extremely small metal line end space" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,700, issued on Oct. 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Area selective deposition for zero via enclosure and extremely small metal line end space" was invented by Shih-Wei Peng (Hsinchu, Taiwan), Chih-Min Hsiao (Hsinchu, Taiwan), Chien-Wen Lai (Hsinchu, Taiwan), Jiann-Tyng Tzeng (Hsinchu, Taiwan) and Yu-Luen Deng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for manufacturing integrated circuit (IC) devices including the operations of forming a first metal pattern (Mx) on a semiconductor substrate, forming a first via pattern (Vx) on the first metal pattern usin...