US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor structures with densely spaced contact features" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,704, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structures with densely spaced contact features" was invented by Chung-Hao Cai (Hsinchu, Taiwan), Chia-Hsien Yao (Hsinchu, Taiwan), Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu City, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes forming a first source/drain feature, a second source/drain feature and an interlayer dielectric (ILD) layer over the first and se...