US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device having planar transistor and FinFET" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,706, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device having planar transistor and FinFET" was invented by Wei-Barn Chen (Tainan City, Taiwan), Ting-Huang Kuo (Tainan City, Taiwan), Shiu-Ko Jangjian (Tainan City, Taiwan), Chi-Cherng Jeng (Tainan City, Taiwan) and Kuang-Yao Lo (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a FinFET on a first region of a substrate and a planar-FET on a second region of the substrate. The FinFET includes a FinFET source region, a FinFET drain region, and a FinFET gate between the FinFET source region and the F...