US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,669, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Pin-Chu Liang (Hsinchu, Taiwan), Hsueh-Chang Sung (Hsinchu County, Taiwan) and Chii-Horng Li (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device is provided. The method includes forming an epitaxial stack over a substrate, the epitaxial stack comprising alternating sacrificial layers and channel layers; patterning the epitaxial stack into a first fin and a second fin; forming a dielectric wall between the ...