US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "N-dipole material for stacked transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,856, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"N-dipole material for stacked transistors" was invented by Cheng-Ming Lin (Kaohsiung, Taiwan), Wei-Yen Woon (Taoyuan, Taiwan) and Szuya Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Dipole engineering techniques for devices of stacked device structures are disclosed herein. An exemplary method for forming a gate stack of a transistor (e.g., a top transistor) of a transistor stack includes forming a high-k dielectric layer, forming an n-dipole dopant source layer over the high-k dielectric layer, performing a thermal driv...