US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Memory device with improved margin and performance and methods of formation thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,628, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Memory device with improved margin and performance and methods of formation thereof" was invented by Shih-Hao Lin (Hsinchu, Taiwan), Kian-Long Lim (Hsinchu City, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Chia-Hao Pao (Hsinchu, Taiwan) and Jing-Yi Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternati...