US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Etch profile control of via opening" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,672, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Etch profile control of via opening" was invented by Te-Chih Hsiung (Taipei City, Taiwan), Yi-Chun Chang (Hsinchu City, Taiwan), Yi-Chen Wang (Hsinchu County, Taiwan), Yuan-Tien Tu (Chiayi County, Taiwan), Huan-Just Lin (Hsinchu City, Taiwan) and Jyun-De Wu (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device comprises a source/drain contact over a source/drain region of a transistor, an etch stop layer above the source/drain contact, an interlayer dielectric (ILD) layer above the etch stop layer, and a source/drain...