US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 27 for "Back end floating gate structure in a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,775,828, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Back end floating gate structure in a semiconductor device" was invented by Yun-Feng Kao (New Taipei City, Taiwan), Katherine H. Chiang (New Taipei City, Taiwan) and Chia Yu Ling (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a non-volatile memory cell structure that may be formed in a back end region of a semiconductor device. The non-volatile memory cell structure may include a floating gate structure in which a portion of a dielectric layer is included between a gate structure and a word ...