US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 27 for "3D semiconductor structure for wide-bandgap semiconductor devices" (Taiwanese, Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,972, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"3D semiconductor structure for wide-bandgap semiconductor devices" was invented by Ting-Fu Chang (Hsinchu City, Taiwan), Jiun-Lei Yu (Zhudong Township, Taiwan), Man-Ho Kwan (Kowloon, Hong Kong) and Chun-Lin Tsai (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a three-dimensional (3D) semiconductor structure for wide-bandgap semiconductor devices in which the wide-bandgap semiconductor devices are split amongst a first IC die and a second IC die. The first IC die in...