US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 20 for "Vertical phase change memory device and related method" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,459, issued on Oct. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical phase change memory device and related method" was invented by Shih-Yu Liao (Hsinchu, Taiwan) and Chung-Liang Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes: a device layer; and an interconnect structure on the device layer, the interconnect structure including a phase change random access memory (PCRAM) device. The PCRAM device includes: an electrode layer above the device layer; an oxide semiconductor layer on the electrode layer; a gate structure that wraps around the oxide semiconductor layer; ...