ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,663, issued on Oct. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor memory device with controlled bit line pre-charging and method of operating the same" was invented by Shiba Mohanty (Hsinchu, Taiwan) and Atul Katoch (Kanata, Canada).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory bank. The memory bank includes a plurality N of memory arrays and a local control circuit. Each memory array includes a plurality of bit cells configured to store bits of information and connected between a plurality of bit lines and a plurality of complement bit lines. The local cont...