ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,429, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices with frontside and backside power rails" was invented by Yu-Xuan Huang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu City, Taiwan), Yi-Hsun Chiu (Hsinchu County, Taiwan) and Hou-Yu Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes multiple transistors formed in a substrate, a frontside power rail disposed on a frontside of the substrate, and a backside power rail disposed on a backside of the substrate. The transistors form at least a first cell functioning under a fi...