US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 20 for "Semiconductor device with ferroelectric layer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,457, issued on Oct. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with ferroelectric layer and method of forming the same" was invented by Bo-Jiun Lin (Hsinchu County, Taiwan), Chih-Sheng Chang (Hsinchu, Taiwan), Yu-Chao Lin (Hsinchu City, Taiwan) and Tung-Ying Lee (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device is provided. A first ferroelectric inducing layer including Ru is deposited on a substrate. A ferroelectric layer including HfZrO is deposited on the first ferroelectric inducing layer. A second ferroelectric inducing la...