US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 20 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,466, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Shih-Cheng Chou (Hsinchu, Taiwan), Wei-Zhong Chen (Taipei, Taiwan), Szu-Ping Tung (Taipei, Taiwan) and Hsiao-Kuan Wei (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method includes: forming, above a substrate, a first electrode having a varying density that increases from a first density level at a bottom surface of the first electrode to a second density level that is higher than the first density level at a top surface of the first electrode...