US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 20 for "Method for efficiently waking up ferroelectric memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,667, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for efficiently waking up ferroelectric memory" was invented by Tzu-Yu Chen (Hsinchu, Taiwan), Sheng-Hung Shih (Hsinchu, Taiwan), Fu-Chen Chang (Hsinchu, Taiwan), Kuo-Chi Tu (Hsinchu, Taiwan) and Wen-Ting Chu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for efficiently waking up ferroelectric memory is provided. A wafer is formed with a plurality of first signal lines, a plurality of second signal lines, a plurality of third signal lines, and a plurality of ferroelectric memory cells that constitute a ferroel...