US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 20 for "Integrated patch antenna having an insulating substrate with an antenna cavity and a high-Kappa dielectric" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,771,018, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated patch antenna having an insulating substrate with an antenna cavity and a high-Kappa dielectric" was invented by Feng Wei Kuo (Hsinchu, Taiwan), Wen-Shiang Liao (Hsinchu, Taiwan) and Ching-Hui Chen (Hisnchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device including operations including the operations of forming a ground plane over a substrate, forming a first conductive pillar in contact with the ground plane and attaching a die to the substrate, electrically isolating the die f...