US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Systems and methods to mitigate cycle time degradation by NBTI effect on PDP SRAM" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,821, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Systems and methods to mitigate cycle time degradation by NBTI effect on PDP SRAM" was invented by Yi-Hsin Nien (Hsinchu, Taiwan), Chih-Yu Lin (Hsinchu, Taiwan), Hidehiro Fujiwara (Hsinchu, Taiwan) and Yen-Huei Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a memory array comprising a plurality of memory cells. The memory circuit includes a first pre-charge circuit coupled to at least one access line electrically connected to the plurality of memory cells and configured to be in a first state during a ...