US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Structure and method for deep trench capacitor" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,307, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure and method for deep trench capacitor" was invented by Fu-Chiang Kuo (Hsinchu City, Taiwan), Po Cheng Kung (Kaohsiung City, Taiwan) and Hsin-Liang Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an integrated circuit (IC) structure that includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate; and a deep trench capacitor formed on the second substrate and electrically connected to the integrated circuit. The deep tre...