US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor devices having counter-doped structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,389, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices having counter-doped structures" was invented by Hsiao-Chun Chang (Hsinchu County, Taiwan) and Guan-Jie Shen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes semiconductor devices and methods for forming the same. A semiconductor device includes nanostructures over a substrate and a source/drain region in contact with the nanostructures. The source/drain region is doped with a first-type dopant. The semiconductor device also includes a counter-doped structure in contact with ...